Substrate heat treatment apparatus, temperature control method for substrate heat treatment apparatus, semiconductor device manufacturing method, temperature control program for substrate heat treatment apparatus, and recording medium

摘要

A temperature control method of a substrate heat treatment apparatus (1) comprising a conductive heating container (11) equipped with a filament (14) and disposed within an evacuable processing container (3), wherein an accelerating voltage is applied between the filament (14) and the heating container (11) is to accelerate thermal energy generated by the filament (14), and a collision of the accelerated thermal electrons with the heating container (11) for heating the heating container (11) is caused, and wherein a curing treatment on a substrate (21) by the heat-generating vessel (11) is performed, the temperature-controlling process comprising: performing a preheating operation for heating the interior of the processing vessel (3) to a higher temperature than the annealing treatment temperature of the substrate (21) and for a longer period of time than the annealing treatment time and then cooling the interior of the processing vessel (3) to a lower temperature than the annealing treatment temperature prior to conveying the substrate (21) into the processing vessel (3); and conveying the substrate (21) into the preheated processing vessel (3) and then raising the temperature of the processing vessel (3) to the annealing treatment temperature for performing the annealing treatment.