Process for producing a semiconductor wafer of monocrystalline silicon, apparatus for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline silicon

摘要

A method of fabricating a single crystal silicon semiconductor wafer containing oxygen and at least one n-type dopant, comprising providing a melt of silicon containing n-type dopant in a quartz crucible, the melt having an initial height hM heating the melt from the side by selectively supplying heat to an upper volume of the melt having an initial height hm, wherein the height hm is smaller than the height hM; pulling a single crystal of silicon according to the CZ method the melt with a pulling rate V, the heating of the melt from above in the region of a phase boundary between the growing monocrystal and the melt, the heating of the melt from above in the region of a surface of the melt, the impingement of the melt with a magnetic field, the counter doping of the melt with p-type dopant; and separating the single crystal silicon semiconductor wafer from the single crystal.