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Interface evaluation method of crystal growth layer by microscopic photoresponse method

机译:微观光响应法评价晶体生长层的界面方法

摘要

PROBLEM TO BE SOLVED: To obtain higher technology for evaluating crystals by use of a microscopic photo-response method and to evaluate different physical phenomena on an interface.SOLUTION: When the presence of at least two barrier wall heights is determined in a photo-response spectrum obtained by irradiating an interface with laser light, the interface is irradiated with a laser beam I having photon energy hν1 and a laser beam II having photon energy hν2. These laser beams are selected in such a manner that, by using a variation point (hνs) where a photoyield (Y) varies by each barrier wall height (qφ, qφ,...), the photon energy hν1 satisfies hνshν1hνb and the photon energy hν2 satisfies hνbhν2hνp, where hνb represents an initiation point of basic absorption and hνp represents a peak value of the photoyield Y. While the interface is scanned with each of the laser beams I, II, a two-dimensional distribution of the photoyield Y and/or a photocurrent image on the interface are obtained for each of the laser beams I, II.SELECTED DRAWING: Figure 4
机译:解决的问题:要获得使用微观光响应方法评估晶体的更高技术,并评估界面上的不同物理现象,解决方案:当在光响应中确定至少两个阻挡壁高度存在时通过用激光照射界面获得光谱,该界面用具有光子能量hν1的激光束I和具有光子能量hν2的激光束II照射。选择这些激光束的方式是,使用变化点(hνs),其中光产率(Y)随每个势垒壁高(qφ,qφ,...)变化,光子能量hν1满足hνs

著录项

  • 公开/公告号JP6744525B2

    专利类型

  • 公开/公告日2020-08-19

    原文格式PDF

  • 申请/专利权人 国立大学法人福井大学;

    申请/专利号JP20160145940

  • 发明设计人 塩島 謙次;

    申请日2016-07-26

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 11:34:35

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