Method for producing single crystal diamond, single crystal diamond, method for producing single crystal diamond substrate, single crystal diamond substrate and semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal diamond, capable of forming a single crystal diamond film having a large area and high quality without generating an adverse effect even when using a substrate having materials having different thermal expansion coefficients.SOLUTION: A method for manufacturing a single crystal diamond comprises the steps of: dispersing and adsorbing a plurality of atomic Si on a substrate 20 to form diamond crystal nuclei 10 using the atomic Si as generation centers; forming a diamond crystal nucleus group pattern 11 consisting of the diamond crystal nuclei 10 on the substrate 20; and forming a single crystal diamond 30 by selectively growing a diamond crystal from the diamond crystal nuclei 10 having the diamond crystal nucleus group pattern 11.SELECTED DRAWING: Figure 1