Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element

摘要

An exchange bias utilization type magnetization rotational element includes an anti-ferromagnetic driving layer which is made of first region and second region anti-ferromagnetisms, and a third region anti-ferromagnetism positioned between the first and second regions, a magnetic coupling layer anti-ferromagnetism which is magnetically coupled to the anti-ferromagnetic driving layer anti-ferromagnetism in the third region anti-ferromagnetism, a first electrode layer anti-ferromagnetism which is bonded to the first region anti-ferromagnetism; and a second electrode layer anti-ferromagnetism which is bonded to the second region anti-ferromagnetism.