In accordance with embodiments disclosed herein, there is provided a high density triple diamond stripline interconnect. An interconnect includes a first reference layer, a second reference layer disposed below the first reference layer, and a dielectric disposed between the first reference layer and the second reference layer. The interconnect further includes a first pair of conductors including a first conductor and a second conductor that are in a broadside-facing orientation within the dielectric below the first reference layer and above the second reference layer. The interconnect further includes a second pair of conductors including a third conductor and a fourth conductor that are in an edge-facing orientation within the dielectric below the first conductor and above the second conductor.
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