VERTICAL NONVOLATILE MEMORY ELEMENT AND THIN FILM TRANSISTOR COMPRISING ALUMINUM OXIDE FILM AND POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER CRYSTALLIZATION-INDUCED BY TRANSITION METAL

摘要

Provided are a vertical nonvolatile memory element and a thin film transistor. The vertical nonvolatile memory element comprises an insulating column extending above a substrate. Alternatingly-laminated interlayer insulating films and control gate patterns are arranged on side portions of the insulating column. A polycrystalline metal oxide channel layer extending along the insulating column is laminated on the insulating column and between the insulating column and the control gate patterns. A tunnel insulating film, a charge capture layer, and a blocking insulating film, which are aluminum oxide films, are sequentially arranged between the polycrystalline metal oxide channel layer and each of the control gate patterns.