METHOD FOR PREPARING A SILICON/GERMANIUM HETEROSTRUCTURE AND HETEROSTRUCTURE

摘要

The invention relates to a method for preparing a heterostructure comprising successively a first layer of silicon, a second layer of silicon oxide, and an Si_1-YGe_Y layer of a silicon-germanium alloy, comprising the steps of creating a growth by epitaxy, of an Si_1-XGe_X layer of a silicon-germanium alloy on a substrate comprising successively a first layer of silicon and a second layer of silicon oxide; performing a partial or complete oxidation of the layer obtained in order to form, on the one hand, an Si_1-YGe_Y layer of a silicon-germanium alloy and, on the other hand, a silicon oxide layer on the surface; performing an acid treatment on the surface layer of silicon oxide on the surface to obtain the heterostructure comprising an Si_1-YGe_Y surface layer made of compressively stressed silicon-germanium alloy; and annealing the heterostructure obtained, in a vacuum, to obtain a heterostructure of which the Si_1-YGe_Y surface layer made of silicon-germanium alloy is at least partially relaxed. The invention also relates to a heterostructure obtained according to this method.