3 A BISMUTHDOPED SEMIINSULATING GROUP NITRIDE WAFER AND ITS PRODUCTION METHOD

摘要

The present invention discloses a semi-insulating wafer of Ga _x Al _y In _1-xy N (0 ≦ x ≦ 1, 0 ≦ x + y ≦ 1) doped with bismuth (BI). The semi-insulating wafer has a resistance of at least 10 ⁴ ohms / cm. Although it is very difficult to obtain single crystal ingots of Group 3 nitrides, the ammonothermal method can grow high oriented polycrystalline or single crystal ingots of Group 3 nitrides with dislocation / crystal grain density less than 10 ⁵ cm ⁻² . The present invention also discloses a semi-insulating Group III nitride bulk crystal and method of making a wafer.