首页> 外国专利> METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM

METHOD OF MANUFACTURING PEROVSKITE THIN FILM CONTAINING TIN AND PHOTOELECTRIC DEVICE HAVING THE PEROVSKITE THIN FILM

机译:制造包含锡的钙钛矿薄膜的方法以及具有钙钛矿薄膜的光电装置

摘要

A method for manufacturing a perovskite thin film is disclosed. The method of manufacturing a perovskite thin film is the step of forming a metal (+ divalent) chalcogenide thin film on a substrate, and applying a precursor solution of the following formula 1 or formula 2 on the metal (+ divalent) chalcogenide thin film And forming a preliminary thin film, and converting the preliminary thin film into a perovskite thin film having a composition of the following formula (3) by heat treatment. [Formula 1] [Formula 2] [Formula 3] In Formulas 1 to 3, A represents a +1 valent organic cation or a +1 valent metal cation, M 1 represents the first metal, M 1 and M 2 each represent different +divalent metal cation, X represents a halogen anion, and x may be a real number greater than 0 and 1 or less.
机译:公开了一种制造钙钛矿薄膜的方法。钙钛矿薄膜的制造方法是以下步骤:在基板上形成金属(+二价)硫属化物薄膜,并且在金属(+二价)硫属化物薄膜上施加下式1或式2的前体溶液:形成初步薄膜,并通过热处理将初步薄膜转化为具有下式(3)组成的钙钛矿薄膜。 [式1] [式2] [式3]在式1至3中,A表示+1价有机阳离子或+1价金属阳离子,M 1 表示第一金属,M < Sup> 1 和M 2 分别表示不同的+二价金属阳离子,X表示卤素阴离子,并且x可以是大于0且小于或等于1的实数。

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