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LATCH-UP PROTECTION CIRCUIT FOR STORAGE SYSTEM

机译:存储系统的闩锁保护电路

摘要

Various embodiments for configurable storage systems are disclosed. The configurable memory selectively selects an operating voltage signal from a plurality of operating voltage signals in order to dynamically control various operating parameters. For example, the configurable memory system selectively selects a maximum operating voltage signal from the plurality of operating voltage signals to maximize read / write speed. As another example, the configurable memory system selectively selects a minimum operating voltage signal from the plurality of operating voltage signals to minimize power consumption. In addition, the configurable memory systems selectively provide the maximum operating voltage signal to bulk (B) terminals of some of their transistors to prevent these transistors from latching up. In some situations, the configurable memory systems can dynamically adjust the maximum operating voltage signal to compensate for fluctuations in the maximum operating voltage signal.
机译:公开了用于可配置存储系统的各种实施例。可配置存储器从多个工作电压信号中选择性地选择工作电压信号,以便动态地控制各种工作参数。例如,可配置存储系统从多个工作电压信号中选择性地选择最大工作电压信号以最大化读取/写入速度。作为另一示例,可配置存储系统从多个工作电压信号中选择性地选择最小工作电压信号以最小化功耗。此外,可配置存储系统有选择地向其某些晶体管的体(B)端子提供最大工作电压信号,以防止这些晶体管闭锁。在某些情况下,可配置存储系统可以动态调整最大工作电压信号,以补偿最大工作电压信号的波动。

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