EDGE-EMITTING SEMI-CONDUCTIVE LASER DIODE AND METHOD FOR MANUFACTURING A VARIETY OF EDGE-EMITTING SEMI-CONDUCTIVE LASER DIODES

摘要

An edge-emitting semiconductor laser diode (1) is specified with: a semiconductor layer sequence (2) which has a bottom surface (2a), a ridge waveguide (3) on a top surface (2b) facing away from the bottom surface (2a) and a side surface (2c), which is arranged transversely to the top surface (2b) comprises, and- a first recess (4) which extends from the bottom surface (2a) to the top surface (2b), wherein- a first area in the area of the first recess (4) the semiconductor layer sequence (5) is removed from the side surface (2c). Furthermore, a method for producing a plurality of edge-emitting semiconductor laser diodes (1) is specified.