Method and device for characterizing a mask for microlithography

摘要

The invention relates to a method and a device for characterizing a mask for microlithography. In a method according to the invention, structures of a mask (421) intended for use in a lithography process in a microlithographic projection exposure system are illuminated with illumination optics (410), the mask being imaged with imaging optics (430) on a detector unit (440) which has a plurality of pixels. A plurality of individual images are carried out with a pixel resolution predetermined by the detector unit, these individual images differing from one another with regard to the position of at least one optical polarization element located in the imaging optics, image data recorded by the detector unit being evaluated in an evaluation unit, with polarization-dependent effects due to The polarization dependency of the interference of electromagnetic radiation occurring in the operation of the microlithographic projection exposure system in the wafer plane can be emulated, the image data obtained in the individual images being converted using at least one calibration image obtained by imaging a structureless area of the mask on the detector unit, the calibration image used being dependent different from the position of the at least one polarization optical element g is elected.