Numerical Analysis of Characterized Back Interface Trapsof SOI Devices by R-G Current

摘要

Characterized back interface traps of SOI devices by the Recombination|Generation (R|G) current has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSIS|ISE.The basis of the principle for the R|G current’s characterizing the back interface traps of SOI lateral p++p+-n++ diode has been demonstrated.The dependence of R|G current on interface trap characteristics has been examined,such as the state density,surface recombination velocity and the trap energy level.The R|G current proves to be an effective tool for monitoring the back interface of SOI devices.