Thin-film transistor upon a substrate and method of manufacturing therefor

摘要

Provided are a method of manufacturing a thin film transistor (TFT) substrate, and a TFT substrate manufactured via same, the method comprising: step 1, providing a substrate (20); step 2, forming on the substrate (20) a gate (22) having a predetermined structure; step 3, forming a gate insulating layer (24) on the gate (22) and the substrate (20); step 4, forming on the gate insulating layer (24) a metal signal line (26) having a predetermined structure; step 5, forming on the gate insulating layer (24) an oxide semiconductor layer (28) having a predetermined structure; step 6, forming on the gate insulating layer (24), the metal signal line (26) and the oxide semiconductor layer (28) a passivation layer (32) having a predetermined structure; step 7, forming on the metal signal line (26), the oxide semiconductor layer (28) and the passivation layer (32) a source/drain electrode (34) having a predetermined structure so as to form a TFT substrate.