Ultraviolet Light Emitting Diodes Employing Nanoscale Compositional Inhomogeneities: A New Approach for Transforming Army Ultraviolet Applications; Conference paper

摘要

Nitride semiconductor ultraviolet optical sources offer the possibility of compact, light-weight, low-cost, low-power-consumption optoelectronic sensors that would enable a new generation of fieldable systems for applications that include biodetection, non-line-of-sight covert communications, and water purification. To realize this promise, significant improvements are required in the wall plug efficiency and lifetimes of these devices that are currently limited by the presence of defects in these materials. In this paper we present optical studies of a new material, AlGaN containing nanoscale compositional inhomogeneities, that indicate that active regions containing this material can significantly improve the efficiency of III-Nitride ultraviolet sources. Further, we demonstrate the operation of these active regions within double heterostructure ultraviolet light emitting diodes that further corroborates this conclusion.