Inquiry into the Use of Bimos-Techniques in Designing Digital Output Circuits

摘要

Combination of bipolar and metal oxide semiconductor techniques to produce BIMOS output circuits is described. The output circuits were designed to be capable of switching a capacitive load of 50 pF in 5 ns between 0 and 5V. The switching properties of a conventional CMOS driver circuit are compared with those of the BIMOS-circuits. A BIMOS-inverter circuit, which consists of minimum area components, is compared with a CMOS-inverter, using results obtained with a ring oscillator consisting of BIMOS or CMOS inverters. The BIMOS circuits do not perform well. The layout of the integrated circuits is described. These are 3 BIMOS driver circuits, a ring oscillator consisting of BIMOS circuits loaded with a capacitor of 1 pF, and a ring oscillator with unloaded BIMOS inverters.