首页> 美国政府科技报告 >Theoretical and experimental studies of radiation-induced damage to semiconductor surfaces and the effects of this damage on semiconductor device performance semiannual progress report no. 2, 1 sep. 1964 - 28 feb. 1965

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Theoretical and experimental studies of radiation-induced damage to semiconductor surfaces and the effects of this damage on semiconductor device performance semiannual progress report no. 2, 1 sep. 1964 - 28 feb. 1965

机译：辐射引起的半导体表面损伤的理论和实验研究以及这种损伤对半导体器件性能半年度进展的影响。 2,1个sep。 1964年 - 28日。 1965年

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Radiation induced damage to semiconductor surfaces and effect on performance

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年度 1965
页码 1-50
总页数 50
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
DAMAGE; RADIATION DAMAGE; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTORS (MATERIALS); RADIATION EFFECT; SEMICONDUCTOR;

机译：损伤;辐射损伤;辐射效应;半导体器件;半导体（材料）;辐射效应;半导体;

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Theoretical and experimental studies of radiation-induced damage to semiconductor surfaces and the effects of this damage on semiconductor device performance semiannual progress report no. 2, 1 sep. 1964 - 28 feb. 1965

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