Survey of Materials and Device Technologies for High-Temperature (T > 300 deg C), Power Semiconductor Electronics

摘要

Recent advances in solid-state materials and device technologies are reviewed as they relate to power semiconductor electronics functioning at temperatures in excess of 300 deg C. The problems faced by semiconductor structures operating in this temperature range are described and six compound semiconductor materials systems capable of improved high-temperature device function, when compared to silicon technologies, are detailed and critiqued. In this light, a number of prototype junction devices including diodes, bipolar junction transistors, and semiconductor controlled rectifiers are described which have demonstrated useful electrical characteristics to temperatures as high as 550 deg C. In conclusion, the major reliability concerns associated with high-temperature operation are addressed and potential solutions described. (ERA citation 11:054579)