Integrated Circuit Electromagnetic Susceptibility Investigation - Phase 2. Bipolar NAND Gate Study

摘要

The main thrust of Phase II of the Integrated Circuit Electromagnetic Susceptibility Investigation has been to develop a model of the effects that occur in bipolar integrated circuits. The broad category of bipolar devices was subdivided into digital and linear with a bipolar operational amplifier representing the linear subcategory reported on elsewhere. A 7400-2-input NAND gate was selected as a representative digital device for intensive study to develop the investigation techniques and to explore the basic physics of the RF interaction with the semiconductor device itself. This report documents the digital study and the results show wider ranging implications than for the bipolar NAND gates alone.