Time Dependent Electron and Ion Flow in Pinched Beam Diodes.

摘要

The time dependent impedance behavior of large-aspect-ratio, pinched-electron-beam diodes is studied using a computer simulation model. The results from a series of particle code simulations are used to construct a picture of the diode impedance as a function of voltage. This description is then used to compare calculated diode current with actual measured values, and good agreement is found. The code is also used to study dynamic pinch formation and ion current generation. A focusing model for the ions is presented. (Author)