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An Improved Method of Liquid Phase Epitaxial Growth of III-V Compound

机译：一种改进的III-V族化合物液相外延生长方法

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摘要

An improved method of liquid phase epitaxial growth of III-V compound on an InP substrate by growing the epitaxial layer in an atmosphere of H2 with 10 to the minus 5th power to 10 to the minus 4th power mole fraction PH3.

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Clawson, A. R.; Lum, W. Y.; McWilliams, G. E.;
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年度 1980
页码 p.1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Patent applications; Group III compounds; Group V compounds; Epitaxial growth; Liquid phases; Layers; Substrates; Indium phosphides; Hydrogen; Microwave equipment; Vapors; Dissociation; Surfaces; Crystal growth; Inventions; Roughness;

机译：专利申请;第III组化合物;第V族化合物;外延生长;液相;层;基质;磷化铟;氢;微波设备;蒸气;离解;表面;晶体生长;发明;粗糙度;

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专利

1. OVERVIEW OF InAs-BASED III-V COMPOUND AND Si/Ge SEMICONDUCTOR EPITAXIAL STRAIN-INDUCED ISLANDS AND QUANTUM DOTS GROWN BY LIQUID PHASE EPITAXY [J] . Gambaryan K.M. Armenian Journal of Physics . 2008,第4期

机译：液相扩散法生长的InAs基III-V族化合物和Si / Ge半导体表观应变诱发的孤岛和量子点
2. Study on the Growth Kinetics of III-V Compound Semiconductor by Liquid Phase Epitaxy for Microelectronic Applications [J] . M. M. Kamal, M. M. Hossain Advances in Microelectronic Engineering . 2014,第1期

机译：液相外延法生长III-V族化合物半导体的微电子应用研究
3. Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors [J] . R.Dhanasekaran, R.S.Qhalid Fareed, P.Ramasamy Journal of Crystal Growth . 2001,第期

机译：III-V族化合物半导体的液相电外延生长模拟研究
4. Rapid Epitaxial Growth of Conducting and Insulating III-V Compounds on (001), (110), (111)A, (311)A and (311)B Surfaces by HVPE [C] . S.Lourdudoss, N.Gopalakrishnan the Minerals, Metals and Materials Society Annual Meeting . 1998

机译：通过HVPE（110），（110），（1111）A，（311）A和（311）B表面的电导和绝缘III-V化合物的快速外延生长
5. High-purity epitaxial growth and characterization of III-V compound semiconductors. [D] . Roth, Thomas John. 1989

机译：III-V族化合物半导体的高纯度外延生长和表征。
6. Liquid‐Phase Quasi‐Epitaxial Growth of Highly Stable Monolithic UiO‐66‐NH2 MOF thin Films on Solid Substrates [O] . Dr. Tawheed Hashem, Dr. Elvia P. Valadez Sánchez, Dr. Peter G. Weidler, 2020

机译：固态衬底上高度稳定的整体式UiO-66-NH2 MOF薄膜的液相准外延生长
7. Determination of the three-dimensional lattice mismatch in quaternary III-V liquid phase epitaxial layers using simultaneous Bragg diffraction of x-rays [O] . Shih-Lin Chang 2011

机译：X射线同时布拉格衍射法测定四元III-V液相外延层中的三维晶格失配
8. An Improved Method of Liquid Phase Epitaxial Growth of III-V Compound. [R] . Clawson, A. R., Lum, W. Y., McWilliams, G. E. 1980

机译：一种改进的III-V族化合物液相外延生长方法。

An Improved Method of Liquid Phase Epitaxial Growth of III-V Compound

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