EPITAXIAL WAFER, ELECTRONIC DEVICE, AND VAPOR PHASE EPITAXIAL GROWTH METHOD OF III-V COMPOUND SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer, an electronic device and a vapor phase epitaxial growth method of a III-V compound semiconductor crystal allowing an etching stopper layer using an InGaP crystal, of the epitaxial wafer having the epitaxial stopper layer to be thinner than 5 nm and capable of etching stop on the surface of the InGaP layer by selective etching even after thinning of the film.;SOLUTION: An epitaxial wafer of the present invention is provided with an epitaxial layer 2 of a III-V compound semiconductor crystal on a semi-insulating compound semiconductor substrate 1, and the epitaxial layer 2 has an etching stopper layer. The etching stopper layer is formed of an InGaP mixed crystal layer 3 in a crystallized state with an irregular structure.;COPYRIGHT: (C)2007,JPO&INPIT