Formation of Epitaxial Si(1-X)GE(x) Films Produced by Wet Oxidation of Amorphous SiGe Layers Deposited on Si(100)

摘要

I have been able to accomplish a significant amount of work in semiconductor thin films, especially Gallium arsenides on silicon heteroepitaxy. I have been involved in the growth of GaAs on silicon, and my interest has been concentrated in defect reduction and propagation. To this end, I have developed a new buffer layer technique which is formed by the implantation of germanium into silicon (100) and silicon (100) 4 to 110. The implanted wafers are then wet oxidized and a single crystal graded SiGe layer is formed. The second step then involves the growth of GaAs on this substrate. The final GaAs/SiGe/Si heterostructures have a reduction of misfit and threading dislocations, due to better lattice matching and thermal expansion coefficients of the SiGe alloy. (mjm)