Optically Active Three-Dimensionally Confined Structures Realized Via MolecularBeam Epitaxical Growth on Nonplanar GaAs (111)B

摘要

We report the first realization on nonplanar patterened substrates of opticallyactive three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxical growth. Growth is carried out on pyramidal mesas on (111)B substrates an in a regime that results in the emergence of three equivalent 100 side facets and leads to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions < 100nm.