Recently the growth techniques of single - crystalline ZnO film promote much attention to ZnO - related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical - source molecular beam epitaxy, and the epilays on a - plane sapphire substrates had a superior quality in crystallographic, optical and dectrical properties. The surface during growth was monitored by a reflection high-energy electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic microscopy, transmission spectrum, photoluminescence (PL) using 325 nm line of a He - Cd laser, and electrical properties were measured by Hall measurement. The n - type doping with Al was successfully performed up to 5 × 1019 crn-3. Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.%氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a-plane的蓝宝石衬底生长了高质量的氧化锌外延材料.在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌.通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料.用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20材料的吸收边的蓝移现象等.以上说明了我们用分子束外延生长设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料.
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