Electronic structure and its evolution with doping in cuprates with account for strong electron correlations

摘要

The electronic structure of the undoped and p- and n-type doped cuprates is studied in the framework of the multiband p-d model using the generalized tight binding method. With hole doping, an unusual in-gap state appears just at the top of the valence band with the spectral weight proportional to the doping concentration. The chemical potential dependence on the hole and electron concentration is asymmetrical and in good agreement with the experimental data. The in-gap bands have spin-polaron origin and the spectral function of this band has a form of small low-energy satellite that can be detected in ARPES measurements. (c) 2005 Elsevier B.V. All rights reserved.