Green function solution of the Boltzmann transport equation for semiconducting thin film with rough boundaries

摘要

In this study the Green function solution of the Boltzmann transport equation on semiconducting thin film with irregular walls has been applied for the first time. The effects of electron scattering caused by these irregularities on the electrical conductivity have been investigated. First of all by using coordinate transformations, the irregularities on the walls have been transferred into the volume and in this way the both surfaces have been brought into flat forms. By taking two models, Gaussian and exponential, for random potential energy term contained in the transformed Hamiltonian as the perturbation, the resistivity results have been calculated and compared with the ones obtained from the methods widely known in the literature. The Boltzmann transport equation has been solved in relaxation time approximation for the irregular walled system in the case of no magnetic field.