THE EFFECTS OF ELECTRON SCREENING LENGTH AND EMITTER QUASI-BOUND STATES ON THE POLAR-OPTICAL PHONON SCATTERING IN RESONANT TUNNELING DIODES

摘要

Polar optical phonon (POP) scattering is one of the dominant scattering mechanisms contributing to the valley current in GaAs and InP based resonant tunneling diodes (RTDs). fe systematically explore two model parameters which determine the strength of the POP scattering enhanced valley current: 1. the electron screening length and 2. the length of the Emitter electron accumulation region included in the simulation. When emitter quasi-bound states are included in the simulation,reasonable agreements with experiment can be obtained with screening lengths of 15 to 30 nm. [References: 11]