Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

摘要

In this work we present a study performed in a plasma-enhanced chemical vapour deposition reactor, where different rf electrode configurations were used with the aim of achieving conditions that lead to growth of highly uniform amorphous silicon films, with the required electronic quality, at high growth rates. This study consists in determining the plasma characteristics under different electrode configurations, in an argon plasma, using as diagnostic tools a Langmuir probe and impedance probe. These results were correlated with the hydrogenated amorphous silicon films produced, thereby allowing us to establish the best electrode configuration to grow electronic-grade-quality amorphous silicon films. [References: 10]