首页> 外文期刊>Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties >Deformation structures under indentations in TiN/NbN single-crystal multilayers deposited by magnetron sputtering at different bombarding ion energies
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Deformation structures under indentations in TiN/NbN single-crystal multilayers deposited by magnetron sputtering at different bombarding ion energies

机译:磁控溅射在不同轰击离子能量下沉积的TiN / NbN单晶多层膜中压痕下的变形结构

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Work elsewhere has suggested that multilayer films with layer thicknesses of a few nanometres can be much harder than monolithic films, although there is considerable variation in the observed magnitude of this effect. To investigate this, multilayer TiN/NbN films have been deposited by reactive magnetron sputtering on to MgO single crystals. The hardnesses measured were similar to those of the TiN and NbN alone, which is consistent with the observation by transmission electron microscopy (TEM) that deformation across the interfaces was not prevented. Varying the electrical potential at which the film was grown from -10 to -200 V and the corresponding ion energy from 10 to 200 eV increased the hardness from 19 to 25 GPa further decreases in the potential caused the hardness to decrease. Using TEM, deformation was observed to occur along the apparent columnar boundaries within the films, Suggesting that the effect of the electrical potential on the measured hardness was caused by changes in the apparent strength of the columnar boundaries, possibly associated with the variations in the volume fraction of voids that were observed on these boundaries. [References: 17]
机译:其他地方的研究表明,尽管观察到的这种效果的大小存在很大差异,但具有几纳米层厚度的多层膜可能比单片膜坚硬得多。为了对此进行研究,已经通过反应磁控溅射将多层TiN / NbN膜沉积到MgO单晶上。测得的硬度与单独的TiN和NbN相似,这与透射电子显微镜(TEM)的观察结果一致,即不能防止跨界面变形。将膜生长的电势从-10 V更改为-200 V,将相应的离子能量从10 eV更改为200 eV,将硬度从19 GPa增加到25 GPa,电位的进一步降低导致硬度降低。使用TEM,观察到薄膜中沿表观柱状边界发生变形,这表明电势对测得硬度的影响是由柱状边界的表观强度变化引起的,可能与体积的变化有关。在这些边界上观察到的空隙的分数。 [参考:17]

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