Mechanisms of energy dissipation during displacement-sensitive indentation in Ge single crystals at elevated temperatures

摘要

Load-displacement indentation tests have been performed in Ge single crystals on a newly designed displacement-sensitive hardness tester in the temperature range 20-450 degrees C. The deformation substructure in the vicinity of the indentation impressions was investigated using selective etching. The energy dissipated during the loading-unloading indentation cycle has been measured and compared with the extent and the structure of the deformation zone. Mechanisms of plastic flow and fracture during indentation are discussed. [References: 19]