首页> 外文期刊>Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties >Crystallographic aspects of dislocation emission from a crack tip in an fcc metal
【24h】

Crystallographic aspects of dislocation emission from a crack tip in an fcc metal

机译:来自fcc金属中裂纹尖端的位错发射的晶体学方面

获取原文
获取原文并翻译 | 示例
           

摘要

Dislocations are observed to emit from crack tips in atomic simulations of fcc metals as Shockley partials. The crystallographic anisotropy associated with emission as partials relative to perfect dislocations is discussed. The stress intensity needed to emit a dislocation is derived in terms of both the anisotropic and the isotropic versions of a Peierls-like criterion posed by Rice et al for dislocation emission and which invokes a critical emission force phi(lc). By systematically changing the orientation of the crystal relative to the crack coordinates, the behaviours of atomic models of embedded-atom method nickel are observed to change from emission to crack extension in a way that is quantitatively consistent with the combined predictions of the Rice et al. and Griffith criteria using a constant emission force phi(lc), and the relevant surface enthalpies. Furthermore, using the value of phi(lc), that best represents the single-crystal results, the predictions are also found to agree favourably with the behaviour of a double-ended crack on a grain boundary where one end emits dislocations while the other extends in a brittle manner. Finally, we explore the emission of trailing dislocations and find that the second and third dislocations require somewhat higher stress intensities to emit but, because the K needed to extend the crack is also increased, the emission of the first dislocation remains the critical step. The origins of phi(Ic) are discussed, and it is suggested that, although phi(Ic), is often associated with the unstable stacking-fault energy it may not, in general, be adequately defined solely in terms of the unstable stacking-fault energy.
机译:在fcc金属的原子模拟中,作为Shockley的分枝,裂纹尖端释放出位错。讨论了与发射有关的晶体各向异性(相对于理想位错的偏态)。赖斯等人针对位错发射提出的Peierls-like准则的各向异性和各向同性版本均得出了产生位错所需的应力强度,该准则调用了临界发射力phi(lc)。通过系统地改变晶体相对于裂纹坐标的取向,可以观察到嵌入原子法镍原子模型的行为从发射到裂纹扩展,其变化与Rice等人的组合预测在数量上一致。 。和格里菲斯(Griffith)准则使用恒定的发射力phi(lc)以及相关的表面焓。此外,使用最能代表单晶结果的phi(lc)值,还发现预测与晶界上的双端裂纹行为相吻合,该裂纹的一端发出位错而另一端延伸。以一种脆弱的方式最后,我们研究了尾随位错的发射,发现第二和第三位错需要更高的应力强度才能发射,但是由于扩展裂纹所需的K也增加了,因此第一位错的发射仍然是关键步骤。讨论了phi(Ic)的起源,并建议,尽管phi(Ic)通常与不稳定的堆垛层错能量相关,但通常不能仅根据不稳定的堆垛来适当地定义它,故障能量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号