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Microstructural characterization and high-temperature strength of hot-pressed silicon nitride ceramics with Lu_2O_3 additives

机译:含Lu_2O_3添加剂的热压氮化硅陶瓷的微观结构表征和高温强度

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摘要

The microstructure of two hot-pressed Si_3N_4 ceramics, with 3.33 and 12.51 wt% Lu_2O_3 additive, have been characterized using transmission electron microscopy. The microstructures of both samples consisted of elongated β-Si_3N_4 grains and a secondary phase, contained in pockets surrounded by the grains, with a crystalline or amorphous form. In the 3.33wt% Lu_2O_3-containing Si_3N_4 ceramic, all the multiple-grain junctions were completely crystalline while, in the 12.51wt% Lu_2O_3-containing Si_3N_4 ceramic, approximately half the junctions were devitrified. A thin intergranular amorphous film present between the two-grain boundary was common; however, a film-free grain boundary was observed in the 12.51wt% Lu_2O_3 sample. The film-free grain boundary was determined to be approximately 35%. Both ceramics fractured in four-point flexure between 1200 and 1600 ℃. Their high-temperature strength is closely associated with the nature of the grain-boundary phase formed during the sintering process.
机译:使用透射电子显微镜对两种热压的Si_3N_4陶瓷(含3.33和12.51 wt%的Lu_2O_3添加剂)的微观结构进行了表征。两种样品的微观结构均由细长的β-Si_3N_4晶粒和次生相组成,次生相包含在晶粒周围的袋中,呈晶体或无定形形式。在含3.33wt%的含Lu_2O_3的Si_3N_4陶瓷中,所有的多晶结都是完全结晶的,而在含12.51wt%的含Lu_2O_3的Si_3N_4陶瓷中,约有一半的结是失透的。在两晶粒边界之间存在薄的晶间非晶薄膜是常见的。然而,在12.51wt%的Lu_2O_3样品中观察到无膜的晶界。确定无膜晶界为约35%。两种陶瓷均在1200至1600℃之间发生四点弯曲断裂。它们的高温强度与在烧结过程中形成的晶界相的性质紧密相关。

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