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首页> 外文期刊>Phosphorus, Sulfur, and Silicon and the Related Elements >Triphenylmethanethiol as a precursor for the simultaneous formation of bis (triphenylmethyl) sulfide, Bis(triphenylmethyl) trisulfide, and bis(triphenylmethyl) peroxide: Crystal structures and hirshfeld surface analyses
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Triphenylmethanethiol as a precursor for the simultaneous formation of bis (triphenylmethyl) sulfide, Bis(triphenylmethyl) trisulfide, and bis(triphenylmethyl) peroxide: Crystal structures and hirshfeld surface analyses

机译:三苯基甲硫醇作为同时形成双(三苯基甲基)硫化物,双(三苯基甲基)三硫化物和双(三苯基甲基)过氧化物的前体:晶体结构和希尔希菲尔德表面分析

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摘要

Structurally identified, three unexpected products, obtained from the reaction of tritphenylmethanethiol with (+)-R-pulegone, i.e., bis(triphenylmethyl) sulfide, bis(tripheny-lmethyl) trisulfide, and bis(triphenylmethyl) peroxide, have been examined using Hirshfeld surface analysis. This analysis has been also performed for several of their simple analogues. Comparison of the results obtained shows that relative contributions of close contacts to the Hirshfeld surfaces of the molecules depend on the number of sulfur atoms between the central C atoms of compounds Ph3CSnCPh3 (n = 1, 2, 3 and 6), and in the case of Ph3XO2XPh3 (X = C, Si, Ge) compounds on the type of central X atom.
机译:在结构上已确定,已使用Hirshfeld对三苯甲基硫醇与(+)-R-普勒酮的反应中获得的三种意外产物进行了检测,即双(三苯基甲基)硫化物,双(三苯基甲基)三硫化物和双(三苯基甲基)过氧化物。表面分析。还对其几种简单的类似物进行了分析。比较所获得的结果表明,紧密接触分子的Hirshfeld表面的相对贡献取决于化合物Ph3CSnCPh3(n = 1、2、3和6)的中心C原子之间的硫原子数。 Ph3XO2XPh3(X = C,Si,Ge)化合物对中心X原子类型的影响。

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