RELAXATION KINETICS OF PHOTOCONDUCTIVITY IN p-SILICON COMPENSATED BY PHOSPHORUS ATOMS

摘要

The relaxation kinetics of photoconductivity in neutron-doped silicon (NDS) of the p-type is discussed. It isfound that the relaxation process in the compensated p-Si differs from that in the reference p-Sisample. The difference is explained on the basis of concept of different micrononuniformity of the materialconductivity. A method based on studying the dependences of charge-carrier mobility on annealing time isdeveloped for determining thermal annealing of structural defects.