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Bismuth doping of top-seeding melt-texture-grown YBa2Cu3O7-delta ceramics

机译:晶种掺杂YBa2Cu3O7-δ陶瓷的铋掺杂

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We have investigated the effects of Bi2O3 additions, up to 1 wt% of Bi2O3, on the superconducting properties and microstructures of top-seeding-melt-texture-growth-processed YBa2Cu3O7-delta ceramics. Differential thermal analysis (DTA) measurements show that these additions do not change the decomposition temperature of the mixtures. Energy dispersive x-ray spectroscopy (EDS) studies of the microstructures after texturation have shown that bismuth additions have no effect on the size of the Y211 particles and do not hinder the action of CeO2 on the inhibition of the coarsening of these particles. However, secondary phase particles, presenting no particular shape, and containing both cerium and bismuth, have been pointed out even for samples with the lowest content of bismuth. The higher the added amount of bismuth, the more numerous the particles are. The composition of these small particles (about 2 mum) evolves with the amount of bismuth added to the starting composition; as the added bismuth content increases, the amount of bismuth increases in the secondary phase particles whereas the amount of cerium is lowered. The critical current densities (77 K, self-field) present an optimum value (67 000 A cm(-2)) for an addition of 0.125 wt% of Bi2O3. A subsequent annealing treatment (430-300 degreesC, 100 h) leads to self-field values of 88 000 A cm(-2). Bi-doped samples synthesized without the usual pre-sintering step exhibit an optimum value (81000 A cm(-2)) for a lower doping rate of 0.0325 wt% of Bi2O3 and the subsequent annealing treatment (430-300 C, 100 h) leads to self-field values of 95 000 A cm(-2). [References: 32]
机译:我们已经研究了Bi2O3的添加量,最高达Bi2O3的1 wt%,对顶部播种熔融纹理生长的YBa2Cu3O7-delta陶瓷的超导性能和微观结构的影响。差热分析(​​DTA)测量表明,这些添加不会改变混合物的分解温度。织构化后对微结构的能量色散X射线光谱(EDS)研究表明,铋的添加对Y211颗粒的尺寸没有影响,并且不妨碍CeO2抑制这些颗粒的粗化。然而,即使对于铋含量最低的样品,也已经指出了不具有特定形状并且同时包含铈和铋的第二相颗粒。铋的添加量越高,颗粒越多。这些小颗粒(约2微米)的组成随添加到起始组成中的铋的量而变化;随着添加的铋含量的增加,次级相颗粒中的铋含量增加,而铈的含量降低。临界电流密度(77 K,自电场)为添加0.125 wt%的Bi2O3提供了最佳值(67 000 A cm(-2))。随后的退火处理(430-300摄氏度,100小时)导致自电场值为88 000 A cm(-2)。在没有常规预烧结步骤的情况下合成的Bi掺杂样品显示出最佳值(81000 A cm(-2)),Bi2O3的掺杂速率较低,为0.0325 wt%,随后进行了退火处理(430-300 C,100 h)导致自场值为95 000 A cm(-2)。 [参考:32]

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