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Pressure enhanced superconductivity at 10K in La doped EuBiS2F

机译:La掺杂EuBiS2F中10K压力增强的超导性

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摘要

We have investigated the effect of La doping and high pressure on superconducting properties of EuBiS2F, which is a newly discovered superconducting material (T-c similar to 0.3 K) (Zhai et al (2014) Phys. Rev. B 90 064518). An enhancement of T-c to 2.2 K is observed in Eu0.5La0.5BiS2F. Upon application of pressure T-c is further enhanced up to similar to 10 K (P = 2.5 GPa). Eu0.5La0.5BiS2F is semiconducting down to 3 K. The onset of a superconductivity-like feature is seen at 2.2 K at ambient pressure. At a pressure above 1.38 GPa, the T-c(onset) remains invariant at 10 K but the T-c(rho = 0) is increased to above 8.2 K. There is a possible crystallographic transformation by application of pressure from a structure of low T-c to a structure corresponding to high T-c.
机译:我们研究了La掺杂和高压对EuBiS2F超导性能的影响,EuBiS2F是一种新发现的超导材料(T-c类似于0.3 K)(Zhai等人(2014)Phys.Rev.B 90 064518)。在Eu0.5La0.5BiS2F中观察到T-c增强到2.2K。施加压力后,T-c进一步提高到接近10 K(P = 2.5 GPa)。 Eu0.5La0.5BiS2F低至3 K时是半导体。在环境压力下于2.2 K时可以看到类似超导电性的特征。在高于1.38 GPa的压力下,Tc(起始)在10 K时保持不变,但Tc(rho = 0)增加到8.2 K以上。通过将压力从低Tc结构转变为低应力结构,晶体可能发生转变。高Tc对应的结构。

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