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首页> 外文期刊>Superconductor Science & Technology >Vortex pinning at low temperature under high magnetic field in SmBa2Cu3Oy superconducting films with high number density and small size of BaHfO3 nano-rods
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Vortex pinning at low temperature under high magnetic field in SmBa2Cu3Oy superconducting films with high number density and small size of BaHfO3 nano-rods

机译:BaHfO3纳米棒的高密度和高密度的SmBa2Cu3Oy超导薄膜在强磁场下低温下的涡旋钉扎

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摘要

We have fabricated 5.6 vol.% BaHfO3 (BHO)-doped SmBa2Cu3Oy (SmBCO) films at a low substrate temperature of 750 degrees C by using the low temperature growth (LTG) technique with a seed layer. Using the LTG technique, we can obtain a purely c-axis oriented SmBCO film even at low growth temperatures. The LTG technique also greatly increases the number density of BHO nanorods. The size and matching field of the BHO nanorods in the films were 5.4 nm and 9.9 T. Transport measurements were carried out, and a high irreversibility field (B-irr) and strong flux pinning force density (F-p) were obtained. The B-irr was 15.1 T at 77 K for B//c. The maximum F-p of 407 GN m(-3) in 10 T at 40 K and 770 GN m(-3) from 9 to 17 T at 20 K have been measured. We believe that the LTG technique can be considered as important for improving of flux pinning performance in BaMO3 (BMO: M = Zr, Sn and Hf)-doped SmBCO coated conductors.
机译:我们通过使用带有种子层的低温生长(LTG)技术在750摄氏度的低基板温度下制造了5.6 vol。%掺杂BaHfO3(BHO)的SmBa2Cu3Oy(SmBCO)薄膜。使用LTG技术,即使在低生长温度下,我们也可以获得纯c轴取向的SmBCO膜。 LTG技术还大大增加了BHO纳米棒的数量密度。薄膜中BHO纳米棒的尺寸和匹配场分别为5.4 nm和9.9T。进行了迁移测量,获得了高不可逆场(B-irr)和强通量钉扎力密度(F-p)。 B // c的B-irr在77 K时为15.1T。测量了40 K时10 T中407 GN m(-3)的最大F-p和20 K时9至17 T中770 GN m(-3)的最大F-p。我们认为,LTG技术对于改善掺杂BaMO3(BMO:M = Zr,Sn和Hf)的SmBCO涂层导体中的磁通钉扎性能至关重要。

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