IR laser production of nanostructured polyborocarbosiloxane powders with Si-O-B bonds

摘要

Continuous-wave CO2 laser irradiation into gaseous mixture of triethylborate and diethoxy(dimethyl)silane represents a very feasible way of direct heat-induced conversion of two precursors, the one with the Si-OR and the other with the B-OR bonds, to the nanostructured polyborocarbosiloxane phase. These materials contain Si-O-B, SiO2Xn (n = 1, 2; X = C, Si), SiO3X (X = Si, C) SiO4, B(OSi)(3), B(OB)(3-x)(OSi)(x) and BO3 configurations, possess Si-C and B-C bonds, have spongy morphology, high specific area and high thermal stability.(C) 2004 Elsevier SAS. All rights reserved.