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Electrical transport properties of potassium germanide tungstates (K_(10)Ge_(18)WO_4): A theoretical study

机译:钨酸锗钨酸盐(K_(10)Ge_(18)WO_4)的电输运性质:理论研究

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摘要

The total and partial density of states, electronic charge density and optical properties of the monoclinic structure K_(10)Ge_(18)WO_4 compound have been investigated using a full relativistic version of the full-potential augmented plane-wave method based on the density functional theory, within local density approximation (LDA), generalized gradient approximation (GGA) and Engel-Vosko GGA(EVGGA). Density of states discloses the semiconductor nature of the calculated compound. There exists a strong hybridization between K-p and K-s, W-d and O-p, W-f and K-p. The analysis of the chemical bonding shows that the bonding possesses strong covalent nature. The dielectric optical properties were also calculated and discussed in detail. The electrical transport coefficients of the under observation compound have been investigated using the density functional theory calculation within EVGGA.
机译:使用基于密度的全势增强平面波方法的相对论形式研究了单斜晶结构K_(10)Ge_(18)WO_4化合物的状态总和部分密度,电荷密度和光学性质功能理论,包括局部密度近似(LDA),广义梯度近似(GGA)和Engel-Vosko GGA(EVGGA)。状态密度公开了所计算化合物的半导体性质。在K-p和K-s,W-d和O-p,W-f和K-p之间存在强杂交。化学键的分析表明该键具有很强的共价性质。还计算并详细讨论了介电光学性质。使用EVGGA中的密度泛函理论计算研究了观察不足的化合物的电输运系数。

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