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Preliminary insight into the formation process of InP and GaP nanocrystals

机译:初步了解InP和GaP纳米晶体的形成过程

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GaP and InP nanocrystals have been prepared from a mixture of GaCl_3, InCl_3, Na and yellow phosphorus. the reaction process was investigated by differential thermal analysis (DTA) and X-ray Diffraction (XRD) measurements. It was suggested that the reaction was as follows: GaCl_3 and InCl_3 were firstly reduced by Na, and thus produced Ga and In simple substances. The the mixture of In, Ga and yellow phosphorus (IGP mixture) reacted further into InP nanocrystals at 480 ℃ and GaP nanocrystals at 600 ℃
机译:GaP和InP纳米晶体已由GaCl_3,InCl_3,Na和黄磷的混合物制备。通过差热分析(​​DTA)和X射线衍射(XRD)测量研究了反应过程。建议反应如下:GaCl_3和InCl_3首先被Na还原,从而生成Ga和In单质。 In,Ga和黄磷的混合物(IGP混合物)在480℃下进一步反应成InP纳米晶体,在600℃下进一步反应成GaP纳米晶体

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