Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

摘要

For boron implants made with ion implanters designed for PV applications, a variety of ion species BFx, (x=0.2) is implanted, while BF2 accounts for the lions share. We investigate the impact of the BF2 implantation dose and the annealing conditions on the resulting electrical characteristics of industrial bifacial n-type PERT solar cells. For an annealing temperature of 950 degrees C, we observe a steep increase in the emitter saturation current density for BF2 implant doses above 1.75 x 10(15) cm(-2).