3-D Stacked Complementary TFT Devices using n-type α-IGZO and p-type F8T2 TFTs - Operation Confirmation of NOT and NAND Logic Circuits

摘要

We have developed 3-D stacked complementary TFT devices using n-type α-IGZO and p-type F8T2 TFTs on PET substrates. We confirmed proper I-V characteristics of both the α-IGZO and F8T2 TFTs and correct input-output characteristics of both NOT and NAND logic circuits. The operation confirmation of the NAND logic circuit suggests that any advanced logic circuit can be composed using these complementary TFT devices.