Recovering behavior of JFET transistors after gamma ray irradiation

摘要

The recovery of damaged discrete Si-JFET transistors after irradiation with gamma ray doses was investigated. After a long time of relaxation, the samples were submitted gradually to different heating cycles with a maximum temperature of 140 °C. At the end of the relaxation and annealing cycles, some radiation damage was recovered. The obtained recovery by annealing was higher than that resulting from relaxation alone. Evaluation of the irradiation and recovery effects,- including the efficiency process, was performed using measurements of electronic noise.