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The role of alkali ions in the 190 K TSL peak in quartz

机译:碱离子在石英190 K TSL峰中的作用

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The role of alkali ions in the creation of the thermally stimulated luminescence (TSL) peak at 190 K in quartz has been investigated by wavelength resolved TSL and thermally stimulated current (TSC) measurements performed on synthetic crystals, both as grown and hydrogen swept, characterised by alkali content of about 1-3 and 0.1 ppm respectively. The 190 K peak has been efficiently produced in as-grown crystals by a double irradiation procedure consisting of a first x-ray irradiation at 90 K followed by heating in the 170-300 K temperature range and a second irradiation at 90 K; this effect has not been observed in the hydrogen swept crystal. Moreover, the study of the spectral composition of the emitted light has shown the existence of two emission bands, one peaking at 450 nm (T < 150 K) and the second one evidenced for T > 150 K and peaking at around 380 nm. In as grown samples, TSC peaks at 205, 260 and at around 350 K (composite structure) have been detected: their intensities are much stronger in the as grown crystal and with the electric field oriented along the z-axis indicating that they have an ionic character. By taking into account the mechanism of formation of the [SiO4/M+](0) (M+ = Li+, Na+) traps (previously found to be responsible for the 190 K TSL peak), the 205 K TSC peak can be attributed to the radiation induced dissociation of alkalis from [AlO4/M+](0) defect centres and subsequent migration near to Si sites; on the other hand, the 260 K TSC peak can be related to the subsequent disintegration of [SiO4/M+](0) defects involving the migration of alkalis to different ionic traps. PACS: 78.60.K-61.72.5-42.70.Ce (C) 2000 Elsevier Science Ltd. All rights reserved. [References: 17]
机译:通过波长分辨的TSL和在合成晶体生长和氢扫描时进行的热激发电流(TSC)测量,研究了碱离子在石英中190 K处热激发发光(TSL)峰的产生中的作用,碱含量分别约为1-3和0.1ppm。通过两次辐照程序可以有效地在生长的晶体中产生190 K峰,该过程包括在90 K下进行第一次X射线辐照,然后在170-300 K温度范围内进行加热,以及在90 K下进行第二次辐照。在氢扫描晶体中未观察到这种效应。此外,对发射光的光谱组成的研究表明存在两个发射带,一个发射带在450 nm(T <150 K)达到峰值,第二个发射带证明T> 150 K并在380 nm附近达到峰值。在生长的样品中,已检测到205、260和约350 K(复合结构)的TSC峰:在生长的晶体中它们的强度要强得多,并且电场沿z轴取向表明它们具有离子性。考虑到[SiO4 / M +](0)(M + = Li +,Na +)陷阱的形成机理(以前发现是190 K TSL峰的原因),因此205 K TSC峰可归因于辐射诱导碱从[AlO4 / M +](0)缺陷中心解离,随后迁移到Si位置附近;另一方面,260 K TSC峰可能与[SiO4 / M +](0)缺陷的后续崩解有关,其中涉及碱向不同离子阱的迁移。 PACS:78.60.K-61.72.5-42.70.Ce(C)2000 Elsevier ScienceLtd。保留所有权利。 [参考:17]

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