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首页> 外文期刊>Nature Communications >Electric-field control of magnetic domain-wallvelocity in ultrathin cobalt with perpendicularmagnetization
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Electric-field control of magnetic domain-wallvelocity in ultrathin cobalt with perpendicularmagnetization

机译:垂直磁化超薄钴磁畴壁速度的电场控制

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Controlling the displacement of a magnetic domain wall is potentially useful for informationprocessing in magnetic non-volatile memories and logic devices. A magnetic domain wallcan be moved by applying an external magnetic field and/or electric current, and its velocitydepends on their magnitudes. Here we show that the applying an electric field can changethe velocity of a magnetic domain wall significantly. A field-effect device, consisting of a topgate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layerwith perpendicular anisotropy, was used to observe it in a finite magnetic field. We found thatthe application of the electric fields in the range of ±2–3 mVcm~(-1) can change the magnetic domain wall velocity in its creep regime (10~6–10~3ms~(-1)) by more than an order of magnitude.This significant change is due to electrical modulation of the energy barrier for the magneticdomain wall motion.
机译:控制磁畴壁的位移对于磁性非易失性存储器和逻辑设备中的信息处理可能很有用。可以通过施加外部磁场和/或电流来移动磁畴壁,其速度取决于其大小。在这里,我们证明了施加电场可以显着改变磁畴壁的速度。使用由顶栅电极,介电绝缘体层和具有垂直各向异性的线状铁磁Co / Pt薄层组成的场效应器件在有限的磁场中对其进行观察。我们发现,在±2–3 mVcm〜(-1)范围内施加电场可以在其蠕变状态(10〜6–10〜3ms〜(-1))中改变磁畴壁速度超过这个重要的变化是由于磁畴壁运动的能垒的电调制所致。

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