Strict Anderson Photon Localization of Amorphous Silicon Carbide

摘要

Based on the Mie scattering theory and the low density approximation, the strict Anderson photon localizations of 3 kinds of amorphous silicon carbide inverse opal photonic crystals were researched theoretically. The results show that the strict localization phenomena could densely occur in the anomalous dispersion region of amorphous silicon carbide. Moreover, there exists a tendency that the maximum localization parameter would increase and shift to larger radius with the decreasing relative refractive index or increasing incident wavelength. In addition, the combination of 10.65-μm nitrous oxide laser and the scatterer stuffing of Air may be more beneficial to achieving the strict localization of amorphous silicon carbide for the larger localization parameter.