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A simple method to synthesize single-crystalline Zn_2SnO_4 (ZTO) nanowires and their photoluminescence properties

机译:一种简单的合成单晶Zn_2SnO_4(ZTO)纳米线的方法及其光致发光特性

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摘要

Single-crystalline Zn_2SnO_4(ZTO) nanowires have been successfully synthesized using a simple thermal evaporation method by heating Zn and Sn powders directly without catalysts under a temperature lower than 800 deg C. The synthesized ZTO nanowires are ribbon-like, and have an average width of 100-200 nm and thickness of 50 nm. These nanowires are ultra-long, up to 0.5-1 mm. Further analyses indicate that the synthesized products are ZTO nanowires with a fairly high purity. These nanowires are highly single crystalline in the face-centred-cubic spinel structure, and grow along the [111] direction. It is believed that the growth process of the nanowires follows a vapour-solid mechanism. Photoluminescence properties of the nanowires were measured, showing two green peaks at 529 and 544 nm and two yellow-orange emission peaks at 572 and 613 nm, which have not been reported before, besides the known blue-green peak (485 nm).
机译:Zn_2SnO_4(ZTO)单晶纳米线已通过简单的热蒸发方法成功合成,该方法通过在不到800摄氏度的温度下直接加热Zn和Sn粉末而无催化剂。合成的ZTO纳米线呈带状,平均宽度100-200nm的厚度和50nm的厚度。这些纳米线超长,可达0.5-1 mm。进一步的分析表明,合成产物为纯度相当高的ZTO纳米线。这些纳米线在面心立方尖晶石结构中是高度单晶的,并沿[111]方向生长。据信,纳米线的生长过程遵循蒸气-固体机制。测量了纳米线的光致发光特性,除了已知的蓝绿色峰(485 nm)之外,还显示了在529和544 nm处的两个绿色峰以及在572和613 nm处的两个橙橙色的发射峰。

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