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Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

机译:基于氧化锌纳米棒的光子器件:增长,发光二极管和激光器的最新进展

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Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.
机译:氧化锌(ZnO)具有出色的发光特性和纳米结构易于生长的特性,为光子器件的发展提供了希望。讨论了ZnO纳米棒生长的最新进展。给出了低温和高温生长方法的结果。提出的技术包括金属有机化学气相沉积(MOCVD),气相外延(VPE),脉冲激光沉积(PLD),蒸气-液-固(VLS),含水化学生长(ACG),最后是电沉积技术作为选择性增长方法的一个例子。显示和分析了各种ZnO纳米棒的结构和光学性质的结果,并使用了不同的技术,包括高分辨率透射电子显微镜(HR-TEM),扫描电子显微镜(SEM),光致发光(PL)和阴极发光(CL) ,适用于室温和低温性能。这些结果表明,生长的ZnO纳米棒具有可再现且有趣的光学特性。使用PLD还证明了在ZnO微米和纳米棒中获得p型掺杂的结果。对于p型导电,磷掺杂的ZnO纳米棒,发现了三个独立的迹象:首先,受主相关的CL峰;其次,使用未掺杂和磷掺杂的导线通道的背栅场效应晶体管的相反转移特性,最后是对IV进行整流。 ZnO:P纳米线/ ZnO:Ga pn结的特性然后,提出了基于n-ZnO纳米棒并结合了不同技术(混合技术)的发光二极管(LED),并展示并讨论了这些LED的最新电学,电光特性。此处讨论和讨论的混合型LED主要分为两类:基于n-ZnO纳米棒和p型晶体衬底的光源,以及基于n-ZnO纳米棒和p型非晶衬底的光源。展示了针对白光LED开发的有前途的电致发光特性。尽管所提供的某些LED在施加的偏置电压超过10 V时显示可见光,但经过优化的结构有望在更低的电压下提供相同的发射。最后,简要回顾了ZnO纳米棒的发射。 ZnO最近发射的回音壁模式(WGM)激光的一个示例被证明是一种增强小尺寸结构受激发射的方法。

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